Back to results
US 8,618,563 B2Granted
Light emitting device with vertically adjustable light emitting pattern
AssigneeLG Innotek Co., Ltd.
InventorsSun Kyung Kim, Hyun Don Song, Jin Wook Lee
Life of this patent
Estimating the term…
Abstract
A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.
Claims18
A light emitting device comprising:
- a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;
- a first photonic crystal structure on the light emitting structure;
- a second photonic crystal structure on the first photonic crystal structure;
- and
- a first layer on outside edge portions of the light emitting structure,
- wherein air is between the first photonic crystal structure and the second photonic crystal structure,
- wherein the air extends from the first photonic crystal structure to the second photonic crystal structure,
- wherein the first photonic crystal structure comprises a same material as the light emitting structure,
- wherein the first photonic crystal structure comprises a plurality of nano-structures having a predetermined nano-pattern period,
- wherein the air is disposed between the plurality of nano-structures, and
- wherein the first layer is disposed only at the outside edge portions of the light emitting structure.
8 more elements
A light emitting device comprising:
- a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;
- a first photonic crystal structure on the light emitting structure;
- a lower encapsulant on the first photonic crystal structure;
- a second photonic crystal structure on the lower encapsulant;
- and
- a first layer on outside edge portions of the light emitting structure,
- wherein the first layer comprises a semiconductor material,
- wherein the first layer is disposed higher than the first photonic crystal structure and lower than the second photonic crystal structure, and
- wherein the first layer is disposed only at the outside edge portions of the light emitting structure.
6 more elements
A light emitting device comprising:
- a light emitting structure including a first conductive type semiconductor layer, and a second conductive type semiconductor layer;
- a first photonic crystal structure on the light emitting structure;
- a lower encapsulant on the first photonic crystal structure;
- a second photonic crystal structure on the lower encapsulant;
- and
- a first layer on outside edge portions of the light emitting structure,
- wherein the first layer contacts both the first photonic crystal structure and the second photonic crystal structure,
- wherein the first layer is disposed higher than the first photonic crystal structure and lower than the second photonic crystal structure, and
- wherein the first layer is disposed only at the outside edge portions of the light emitting structure.
6 more elements
Dependencies are inferred from the claim text.