Wide-band-gap reverse-blocking MOS-type semiconductor device

A wide-band-gap reverse-blocking MOS-type semiconductor device comprising:

• a wide-band-gap semiconductor layer of a first conductivity type;
• a semiconductor substrate of a second conductivity type on a side of a first major surface of the wide-band-gap semiconductor layer;
• a trench formed through the semiconductor substrate, the trench extending into the wide-band-gap semiconductor layer;
• a metal film in a bottom of the trench, the metal film contacting with the wide-band-gap semiconductor layer for forming a Schottky junction;
• an active section comprising a MOS-gate structure, the active section being on a side of a second major surface of the wide-band-gap semiconductor layer facing to an area, therein the Schottky junctions are formed;
• a breakdown withstanding section surrounding the active section;
• and
• a trench isolation layer surrounding the breakdown withstanding section, the trench isolation layer extending from the second major surface of the wide-band-gap semiconductor layer into the semiconductor substrate, the trench isolation layer comprising an insulator film buried therein.