Silicon carbide semiconductor device and method of manufacturing the same

A silicon carbide semiconductor device comprising:

• a substrate made of silicon carbide, the substrate having one of a first conductivity type and a second conductivity type, the substrate having first and second opposing surfaces;
• a drift layer disposed on the first surface of the substrate, the drift layer made of silicon carbide, the drift layer having the first conductivity type and having a lower impurity concentration than the substrate;
• a base region disposed on the drift layer, the base region made of silicon carbide and having the second conductivity type;
• a source region disposed at a surface portion of the base region, the source region made of silicon carbide, the source region having the first conductive type and having a higher impurity concentration than the drift layer;
• a trench provided from a surface of the source region to a depth deeper than the base region, the trench arranged in a stripe pattern including a plurality of lines extending in a predetermined direction;
• a gate insulating layer disposed on an inner wall of the trench;
• a channel layer disposed between the base region and the gate insulating layer in the trench, the channel layer made of silicon carbide and having the first conductivity type;
• a gate electrode disposed on the gate insulating layer in the trench;
• a source electrode electrically coupled with the source region and the base region;
• a drain electrode located on the second surface of the substrate;
• and
• a deep layer disposed under the base region and located to a depth deeper than the trench, the deep layer having the second conductivity type, the deep layer divided into first group of portions and a second group of portions disposed away from each other in a direction that crosses the predetermined direction, the first group of portions disposed at positions corresponding to the plurality of lines of the trench and arranged at equal intervals in the predetermined direction, the first group of portions surrounding corners of bottoms of the plurality of lines, the second group of portions disposed at center positions between adjacent two of the plurality of lines, wherein
• an accumulation channel is provided at the channel layer on the sidewall of the trench and electric current flows between the source electrode and the drain electrode through the source region and the drift layer by controlling a voltage applied to the gate electrode.

A silicon carbide semiconductor device comprising:

• a substrate made of silicon carbide, the substrate having one of a first conductivity type and a second conductivity type, the substrate having first and second opposing surfaces;
• a drift layer disposed on the first surface of the substrate, the drift layer made of silicon carbide, the drift layer having the first conductivity type and having a lower impurity concentration than the substrate;
• a base region disposed on the drift layer, the base region made of silicon carbide and having the second conductivity type;
• a source region disposed at a surface portion of the base region, the source region made of silicon carbide, the source region having the first conductive type and having a higher impurity concentration than the drift layer;
• a trench provided from a surface of the source region to a depth deeper than the base region, the trench extending in a predetermined direction;
• a gate insulating layer disposed on an inner wall of the trench;
• a gate electrode disposed on the gate insulating layer in the trench;
• a source electrode electrically coupled with the source region and the base region;
• a drain electrode located on the second surface of the substrate;
• and
• a deep layer disposed under the base region and located to a depth deeper than the trench, the deep layer having the second conductivity type, the deep layer including a plurality of sections extending in a direction that crosses the predetermined direction, each of the plurality of sections includes a plurality of portions located at positions corresponding to the trench and a plurality of portions located between adjacent two of the plurality of lines, each of the plurality of portions located between the adjacent two of the plurality of lines is narrower than each of the plurality of portions located at the positions corresponding to the trench, wherein
• an inversion channel is provided at the surface portion of the base region located on the sidewall of the trench and electric current flows between the source electrode and the drain electrode through the source region and the drift layer by controlling a voltage applied to the gate electrode.

A silicon carbide semiconductor device comprising:

• a substrate made of silicon carbide, the substrate having one of a first conductivity type and a second conductivity type, the substrate having first and second opposing surfaces;
• a drift layer disposed on the first surface of the substrate, the drift layer made of silicon carbide, the drift layer having the first conductivity type and having a lower impurity concentration than the substrate;
• a base region disposed on the drift layer, the base region made of silicon carbide and having the second conductivity type;
• a source region disposed at a surface portion of the base region, the source region made of silicon carbide, the source region having the first conductive type and having a higher impurity concentration than the drift layer;
• a trench provided from a surface of the source region to a depth deeper than the base region, the trench arranged in a plurality of lines extending in a predetermined direction;
• a gate insulating layer disposed on an inner wall of the trench;
• a channel layer disposed between the base region and the gate insulating layer in the trench, the channel layer made of silicon carbide and having the first conductivity type;
• a gate electrode disposed on the gate insulating layer in the trench;
• a source electrode electrically coupled with the source region and the base region;
• a drain electrode located on the second surface of the substrate;
• and
• a deep layer disposed under the base region and located to a depth deeper than the trench, the deep layer having the second conductivity type, the deep layer including a plurality of sections extending in a direction that crosses the predetermined direction, each of the plurality of sections includes a plurality of portions located at positions corresponding to the trench and a plurality of portions located between adjacent two of the plurality of lines, each of the plurality of portions located between adjacent two of the plurality lines is narrower than each of the plurality of portions located at the positions corresponding to the trench, wherein
• an accumulation channel is provided at the channel layer on the sidewall of the trench and electric current flows between the source electrode and the drain electrode through the source region and the drift layer by controlling a voltage applied to the gate electrode.