Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a substrate;
• a first electrode provided on the substrate;
• a first conductivity type layer provided on the first electrode, and including a first contact layer,
• a light emitting layer provided on the first conductivity type layer;
• a second conductivity type layer provided on the light emitting layer, and including a second contact layer;
• and
• a second electrode provided on the second conductivity type layer, and including a narrow-line region and a pad region, part of the narrow-line region extending on the second contact layer, the pad region provided on a non-formation region of the second contact layer,
• the first contact layer and the second contact layer being provided not to overlap each other as viewed from above, and
• the first electrode including a transparent conductive film and a reflective metal layer, the transparent conductive film being with the first contact layer and including one of tin doped indium oxide, zinc oxide and tin oxide, the reflective metal layer provided between the transparent conductive film and the support substrate and being able to reflect light from the light emitting layer.

A semiconductor light emitting device comprising:

• a substrate;
• a first electrode provided on the substrate;
• a first conductivity type layer provided on the first electrode, and including a first contact layer,
• a light emitting layer provided on the first conductivity type layer;
• a second conductivity type layer provided on the light emitting layer, and including a second contact layer;
• and
• a second electrode provided on the second conductivity type layer, and including a narrow-line region and a pad region, part of the narrow-line region extending on the second contact layer, the pad region provided on a non-formation region of the second contact layer,
• the first contact layer and the second contact layer being provided not to overlap each other as viewed from above, and
• a surface of the first conductivity type layer on a side of the first electrode including a convex region and a bottom region, the convex region being selectively provided and made of the first contact layer, and the bottom region being provided around the convex region and made of the window layer.