Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor

A method of manufacturing a thin film transistor (TFT) including a gate, a channel layer, a source, and a drain, wherein the channel layer is formed of an oxide semiconductor, an exposed portion of the channel layer between the source and drain is amorphous, and only a portion of the channel layer contacting the source and the drain is a crystallized portion, and wherein the portion of the channel layer includes only a first portion of the channel layer formed entirely under the source and only a second portion of the channel layer formed entirely under the drain, wherein the method comprises:

• forming the channel layer using the oxide semiconductor;
• and
• crystallizing the portion of the channel layer contacting the source and the drain by injecting a metal component into the channel layer.