Organic light-emitting element, display panel, display device, and manufacturing method for organic light-emitting element
AssigneePanasonic Corporation
InventorKou Sugano
Life of this patent
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Abstract
A planarization film is formed as a silicon oxide monolayer using, for instance, a spin coat method, through, for example, applying a silicon-containing organic solvent to an upper portion of a TFT layer and planarizing an upper surface of a resist film made up of a silicon-containing organic solvent, heating a predetermined processing fluid, e.g., peroxymonosulfuric acid, and discharging the processing fluid heated to, for example, 150° C., onto the planarized upper surface of the resist film such that organic components of the resist film are dissolved while silicon in the resist film is oxidized by the processing fluid.
Claims27
An organic light-emitting element, comprising:
- an organic electroluminescence layer including a pair of electrodes and an organic light-emitting layer disposed between the pair of electrodes;
- a thin-film transistor layer formed below the organic electroluminescence layer, being electrically connected to one electrode of the pair of electrodes, and causing the organic electroluminescence layer to emit light;
- and
- a planarization film disposed between the organic electroluminescence layer and the thin-film transistor layer, planarizing irregularities in an upper portion of the thin-film transistor layer such that the organic electroluminescence layer is formed over a planarised surface, wherein
- the planarization film is made up of a silicon oxide monolayer, and
- the planarization film made up of the silicon oxide monolayer is formed through:
- using a predetermined liquid phase film formation method to apply a silicon-bearing organic solvent to the upper portion of the thin-film transistor layer and to planarize an upper surface of the silicon-bearing organic solvent, thus forming a silicon-bearing organic solvent film;
- heating a predetermined solvent that includes a material having heat-increased oxidizing power to obtain a heated solvent;
- and
- discharging the heated solvent onto the silicon-bearing organic solvent film having a planarised upper surface, wherein
- the heated solvent dissolves organic components in the silicon-bearing organic solvent film while at least silicon in the silicon-bearing organic solvent film remains, and the silicon that remains undergoes liquid phase oxidation by the heated solvent.
An organic light-emitting device manufacturing method, comprising:
- forming a thin-film transistor layer;
- forming a planarization film planarizing irregularities in a top portion of the thin-film transistor layer;
- and
- forming a pair of electrodes and an organic electroluminescence layer on a planarised upper surface of the planarization film, the organic electroluminescence layer including an organic light-emitting layer disposed between the pair of electrodes, and one electrode of the pair of electrodes being electrically connected to the thin-film transistor layer, wherein
- the planarization film is made up of a silicon oxide monolayer, and
- forming the planarization film made up of the silicon oxide monolayer involves:
- using a predetermined liquid phase film formation method to apply a silicon-bearing organic solvent to the upper portion of the thin-film transistor layer and to planarize an upper surface of the silicon-bearing organic solvent, thus forming a silicon-bearing organic solvent film;
- heating a predetermined solvent that includes a material having heat-increased oxidizing power to obtain a heated solvent;
- and
- discharging the heated solvent onto the silicon-bearing organic solvent film having a planarised upper surface, wherein
- the heated solvent dissolves organic components in the silicon-bearing organic solvent film while at least silicon in the silicon-bearing organic solvent film remains, and the silicon that remains undergoes liquid phase oxidation by the heated solvent.
Dependencies are inferred from the claim text.