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US 8,618,534 B2Granted
Field-effect transistor with a dielectric layer having therein denatured albumen
AssigneeNational Cheng Kung University
InventorsTzung-Fang Guo, Jer-Wei Chang, Ten-Chin Wen
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Abstract
A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.
Claims7
A field-effect transistor, comprising:
- a gate electrode;
- a source electrode;
- a drain electrode;
- a semiconductor active layer connected to the source electrode and the drain electrode;
- and
- a dielectric layer positioned between the gate electrode and the semiconductor active layer and provided with denatured albumen, wherein the denatured albumen is hydrophobic and formed through a method including heating avian native egg protein at a temperature ranging from 80 to 200° C.
3 more elements
Dependencies are inferred from the claim text.