Organic thin-film transistor
AssigneeIdemitsu Kosan Co., Ltd.
InventorsTakashi Sekiya, Hiroaki Nakamura
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Abstract
A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer.
Claims10
A bottom-contact type organic thin film transistor comprising, on a substrate, at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, wherein
- at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking a metal oxide layer and a metal layer,
- the metal layer is surface-modified with an organic thin film layer,
- the metal oxide layer contacts the organic semiconductor layer, and
- the work function of the metal oxide layer represented by IPox and the work function of the metal layer represented by IPmm satisfy the following expression (1):
- IPox>IPmm (1).
Dependencies are inferred from the claim text.