Photoelectric transducer device having a rectifier is a second transistor with diode-connected and normally on
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHajime Kimura, Satoshi Shinohara, Yoshiaki Ito, Takuro Ohmaru, Shunpei Yamazaki
Life of this patent
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Abstract
An object is to obtain a diode having a small voltage drop and to reduce the fabrication cost of a converter circuit. A photoelectric transducer device including: a photoelectric transducer element; and a converter circuit stepping up or stepping down an output of the photoelectric transducer element and including a switching element and a rectifier, in which the switching element is a first insulated gate bipolar transistor that is normally off and in which the rectifier is a second insulated gate bipolar transistor that is diode-connected and normally on.
Claims16
A photoelectric transducer device comprising:
- a photoelectric transducer element;
- and
- a converter circuit stepping up or stepping down an output of the photoelectric transducer element, the converter circuit including a switching element and a rectifier,
- wherein the switching element is a first insulated gate bipolar transistor that is normally off, and
- wherein the rectifier is a second insulated gate bipolar transistor that is diode-connected and normally on.
A photoelectric transducer device comprising:
- a photoelectric transducer element;
- and
- a converter circuit stepping up or stepping down an output of the photoelectric transducer element, the converter circuit including a switching element and a rectifier,
- wherein the switching element is a first insulated gate bipolar transistor that is normally off,
- wherein the rectifier is a second insulated gate bipolar transistor that is diode-connected and normally on,
- wherein the first insulated gate bipolar transistor includes a first emitter region, a first channel formation region, and a first collector region, and
- wherein the second insulated gate bipolar transistor includes a second emitter region, a second channel formation region having impurity concentration that is different from impurity concentration in the first channel formation region, and a second collector region.
A photoelectric transducer device comprising:
- a photoelectric transducer element;
- and
- a converter circuit stepping up or stepping down an output of the photoelectric transducer element, the converter circuit including a switching element and a rectifier,
- wherein the switching element is a first field-effect transistor that is normally off, and
- wherein the rectifier is a second field-effect transistor that is diode-connected and normally on.
A photoelectric transducer device comprising:
- a photoelectric transducer element;
- and
- a converter circuit stepping up or stepping down an output of the photoelectric transducer element, the converter circuit including a switching element and a rectifier,
- wherein the switching element is a first field-effect transistor that is normally off,
- wherein the rectifier is a second field-effect transistor that is diode-connected and normally on,
- wherein the first field-effect transistor includes a first source region, a first drain region, and a first channel formation region, and
- wherein the second field-effect transistor includes a second source region, a second drain region, and a second channel formation region having impurity concentration that is different from impurity concentration in the first channel formation region.
Dependencies are inferred from the claim text.