Image sensor array for the back side illumination with junction gate photodiode pixels
AssigneeAptina Imaging Corporation
InventorsJaroslav Hynecek, Hirofumi Komori, Xia Zhao
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AssigneeAptina Imaging Corporation
InventorsJaroslav Hynecek, Hirofumi Komori, Xia Zhao
Estimating the term…
The present invention relates to a junction gate photo-diode (JGP) pixel that includes a JGP for accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also included is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also included is a pinned barrier (PB) positioned on the substrate between the JGP and the FD, the PB temporarily blocks charge transfer between the JGP and the FD. The accumulated charge is transferred from the JGP to FD by applying a control voltage to the JGP control terminal.
A junction gate photo-diode (JGP) pixel, comprising:
A method for controlling a junction gate photo-diode (JGP) pixel, the pixel comprising a JGP, the JGP positioned on a substrate including a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer, a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier, a pinned barrier (PB) positioned on the substrate between the JGP and the FD, a reset gate positioned on the substrate and coupled to the FD, and a controller, the method comprising:
A method for forming a junction gate photo-diode (JGP) pixel on a substrate, the method comprising:
Dependencies are inferred from the claim text.