Materials containing voids with void size controlled on the nanometer scale
AssigneeInternational Business Machines Corporation
InventorsStephen M. Gates, Alfred Grill, Deborah A. Neumayer, Son Nguyen, Vishnubhai V. Patel
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Abstract
A method of forming a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD is provided. The porous composite material includes a first solid phase having a first characteristic dimension and a second phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.
Claims16
A method comprising:
- providing a single precursor selected from the group consisting of an alkoxysilane containing one C═C double bond into a reactor, wherein said one C═C double bond is a built-in porogen;
- depositing a dielectric film from said single precursor in the presence of at least CO;
- and
- removing said built-in porogen from said dielectric film to provide a porous dielectric material comprising a first phase and a second phase comprised of pores, wherein said pores have a diameter of about 5 nm or less, a pore size distribution having a maximum that is less than about 1 nm, a full width at half maximum in the pore size distribution ranging from 1 to 3 nm, and with a fraction less than 0.1 of pores having a pore size of greater than about 1 nm.
A method comprising:
- providing a single precursor selected from the group consisting of an alkoxysilane containing one C═C double bond into a reactor, wherein said one C═C double bond is a built-in porogen;
- depositing a dielectric film from said single precursor in the presence of at least N2;
- and
- removing said built-in porogen from said dielectric film to provide a porous dielectric material comprising a first phase and a second phase comprised of pores, wherein said pores have a diameter of about 5 nm or less, a pore size distribution having a maximum that is less than about 1 nm, a full width at half maximum in the pore size distribution ranging from 1 to 3 nm, and with a fraction less than 0.1 of pores having a pore size of greater than about 1 nm.
Dependencies are inferred from the claim text.