Aqueous cerium-containing solution having an extended bath lifetime for removing mask material

A method of removing a mask material comprising:

• providing an ion implanted and patterned mask material atop a substrate;
• and
• contacting said ion implanted and patterned mask material with an aqueous solution comprising a cerium (IV) complex or salt and at least one booster additive, said at least one booster additive is a compound that can be oxidized by Ce (IV) and is an alcohol selected from the group consisting of methanol, ethanol, propanol, isopropanol, n-butanol, isobutanol, t-butanol, ethylene glycol, glycerol, cyclopropanol, cyclobutanol, cyclopentanol, polyvinylalcohol (PVA), polyethylene glycol (PEG), and a polymer with at least one alcohol functionality as an end group, wherein said contacting removes said ion implanted and patterned mask material from atop said semiconductor substrate.

A method of removing a mask material comprising:

• providing an ion implanted and patterned mask material atop a substrate;
• and
• contacting said ion implanted and patterned mask material with an aqueous solution comprising a cerium (IV) complex, a stabilizer and at least one booster additive, said at least one stabilizer is ammonium trifluoroacetate and said at least one booster additive is a compound that can be oxidized by Ce (IV) and is a C1-C5 alcohol, wherein said contacting removes said ion implanted and patterned mask material from atop said semiconductor substrate.

A method of removing a mask material comprising:

• providing an ion implanted and patterned mask material atop a substrate;
• and
• contacting said ion implanted and patterned mask material with an aqueous solution comprising a cerium (IV) complex or salt, a cerium (III) complex or salt, and at least one booster additive, said at least one booster additive is a compound that can be oxidized by Ce (IV) and is present in said aqueous solution in an amount from 25 ppm to 2500 ppm, wherein said contacting removes said ion implanted and patterned mask material from atop said semiconductor substrate.