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US 8,618,000 B2Granted
Selective wet etching of hafnium aluminum oxide films
AssigneeMicron Technology, Inc.
InventorsPrashant Raghu, Yi Yang
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Abstract
Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.
Claims19
A method of forming a semiconductor device, comprising:
- forming a plurality of openings extending through a dielectric antireflective coating material, a hafnium aluminum oxide material, and a silicon oxide material;
- and
- exposing the dielectric antireflective coating material, the hafnium aluminum oxide material, and the silicon oxide material to an etchant solution consisting essentially of water and phosphoric acid to remove the dielectric antireflective coating material and the hafnium aluminum oxide material overlying the silicon oxide material.
A method of forming a semiconductor device, comprising:
- forming a dielectric antireflective coating material over a hafnium aluminum oxide material, the hafnium aluminum oxide material overlying a dielectric material on a substrate;
- forming at least one opening through the dielectric antireflective coating material, the hafnium aluminum oxide material and the dielectric material;
- and
- applying an etchant solution consisting of phosphoric acid, water and a pH modifying acid to remove the dielectric antireflective coating material and the hafnium aluminum oxide material at a faster rate than the dielectric material.
1 more element
Dependencies are inferred from the claim text.