Method of forming metal silicide contact and metal interconnect

A method of making a device, comprising:

• a) forming a patterned doped dielectric on a substrate, the patterned doped dielectric containing a dopant;
• b) forming a continuous semiconductor layer on least part of adjacent structures in the patterned doped dielectric and a gap between the adjacent structures;
• c) forming a gate dielectric on the continuous semiconductor layer, at least over the gap;
• d) diffusing the dopant into regions of the continuous semiconductor layer within a diffusion distance of the patterned, doped dielectric;
• e) forming a gate on the gate dielectric;
• f) printing an ink comprising a silicide-forming metal on exposed portions of the continuous semiconductor layer;
• and
• g) drying the ink and heating the silicide-forming metal and a silicon surface in contact therewith sufficiently to form a metal silicide layer, at least one of the continuous semiconductor layer and the gate comprising the silicon surface.