Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming an interlayer dielectric film on a substrate such that the interlayer dielectric film includes a trench;
• forming an insulating layer along a sidewall and a bottom of the trench and along a top surface of the interlayer dielectric film;
• forming a metal layer on the insulating layer along the sidewall and the bottom of the trench and along the top surface of the insulating layer;
• forming a sacrificial layer pattern that includes a siloxane, the sacrificial layer pattern being formed to fill a portion of the trench and being formed on the metal layer;
• forming a first electrode layer by etching the metal layer using the sacrificial layer pattern;
• and
• removing the sacrificial layer pattern using an etching solution that excludes hydrogen fluoride.

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate having first and second regions defined thereon;
• forming an interlayer dielectric film on the substrate, the interlayer dielectric film including first and second trenches on the first and second regions of the substrate, respectively;
• forming a metal layer on the substrate, the metal layer including a first metal layer in the first region and a second metal layer in the second region;
• forming a sacrificial layer pattern on the first metal layer such that the sacrificial layer is on the first metal layer and fills a portion of the first trench, the sacrificial layer being excluded in the second region;
• removing portions of the metal layer after forming the sacrificial layer pattern such that a part of the first metal layer remains under the sacrificial layer pattern;
• and
• removing the sacrificial layer pattern using an etching solution that excludes hydrogen fluoride such that a first electrode layer is formed, the first electrode layer corresponding to the part of the first metal layer remaining in the first trench.