Through-substrate vias
AssigneeHewlett-Packard Development Company, L.P.
InventorDevin Alexander Mourey
Life of this patent
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Abstract
A method of etching through-substrate vias comprising depositing a layer of embossable material on a first side and a second side of a thin-film stack, the thin-film stack including a base substrate, embossing the embossable material deposited on the first side and the second side of the thin-film stack with a pattern, hardening the embossable material, and etching the first and second sides of the thin-film stack, the etching of the second side of the thin-film stack forming vias through the base substrate.
Claims9
A method of etching through-substrate vias comprising:
- depositing a layer of embossable material on a first side and a second side of a thin-film stack, the thin-film stack including a base substrate;
- embossing the embossable material deposited on the first side and the second side of the thin-film stack with a pattern;
- hardening the embossable material;
- and
- etching the first and second sides of the thin-film stack, the etching of the second side of the thin-film stack forming vias through the base substrate;
- in which embossing the embossable material on the first and second sides of the thin-film stack is performed simultaneously.
A method of etching through-substrate vias comprising:
- depositing a layer of embossable material on a first side and a second side of a thin-film stack;
- embossing the embossable material deposited on the first side and the second side of the thin-film stack with a three-dimensional pattern;
- hardening the embossable material;
- etching the first and second sides of the thin-film stack, the etching of the second side of the thin-film stack forming vias through the base substrate;
- and
- depositing a conductive material on the back side of the thin film stack;
- in which depositing a conductive material on the back side of the thin film stack electrically connects a number of conductive layers within the thin-film stack;
- the conductive layers comprising gate layer, a source layer, and a drain layer.
Dependencies are inferred from the claim text.