High temperature tungsten metallization process

A method for forming a tungsten-containing material on a substrate, comprising:

• forming an adhesion layer comprising titanium nitride on a dielectric layer disposed on a substrate;
• forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer comprises tungsten nitride and carbon;
• heating the tungsten nitride intermediate layer to a decomposition temperature during a thermal annealing process, wherein the tungsten nitride intermediate layer decomposes to form a tungsten barrier layer comprising metallic tungsten or tungsten-carbon material and the decomposition temperature is within a range from about 700° C. to less than 1,000° C.;
• forming a nucleation layer on the tungsten barrier layer;
• and
• forming a tungsten bulk layer on the nucleation layer.

A method for forming a tungsten-containing material on a substrate, comprising:

• forming an adhesion layer comprising titanium nitride on a dielectric layer disposed on a substrate;
• forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer comprises tungsten nitride and carbon;
• forming a tungsten barrier layer from the tungsten nitride intermediate layer during a thermal annealing process, wherein the tungsten barrier layer comprises metallic tungsten or tungsten-carbon material formed by thermal decomposition of the tungsten nitride intermediate layer;
• and
• forming a tungsten bulk layer directly on the tungsten barrier layer.