US 8,617,981 B2Granted

Semiconductor device and manufacturing method thereof

AssigneeRenesas Electronics Corporation

InventorsJunji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi

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Abstract

The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Claims12

Dependent claims

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

(a) forming a first insulating film over a semiconductor substrate;
(b) forming a first wiring trench in the first insulating film;
(c) filling a first metal film in the first wiring trench;
(d) forming a second insulating film over the first metal film and over the first insulating film;
(e) forming a third insulating film over the second insulating film;
(f) forming a fourth insulating film formed over the third insulating film;
(g) forming a contact hole in the fourth, third and second insulating films;
(h) forming a second wiring trench in the fourth insulating film;
and
(i) filling a second metal film in the second wiring trench and the contact hole as one combined unit, such that the second metal wiring is connected to the first metal film,
wherein the first and second metal films include copper as a primary component,
wherein the fourth insulating film has a greater thickness than the combined thicknesses of the second and third insulating films, has a dielectric constant lower than a dielectric constant of a silicon oxide film and is comprised of a material including silicon, oxygen and carbon,
wherein the first insulating film is comprised of a material including silicon, oxygen and carbon,
wherein the second insulating film is comprised of a material including silicon, carbon and nitrogen,
wherein the third insulating film is comprised of a material including silicon and carbon,
wherein the material of the second insulating film is different form the material of the third insulating film, and
wherein a thickness of the second insulating film is larger than a thickness of the third insulating film.

14 more elements

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

(a) forming a first insulating film over a semiconductor substrate;
(b) forming a first wiring trench in the first insulating film;
(c) filling a first metal film in the first wiring trench;
(d) forming a second insulating film over the first metal film and over the first insulating film;
(e) forming a third insulating film over the second insulating film;
(f) forming a fourth insulating film formed over the third insulating film;
(g) forming a contact hole in the fourth, third and second insulating films;
(h) forming a second wiring trench in the fourth insulating film;
and
(i) filling a second metal film in the second wiring trench and the contact hole as one combined unit, such that the second metal wiring is connected to the first metal film,
wherein the first and second metal films include copper as a primary component,
wherein the fourth insulating film has a greater thickness than the combined thicknesses of the second and third insulating films, has a dielectric constant lower than a dielectric constant of a silicon oxide film and is comprised of a material including silicon, oxygen and carbon,
wherein the first insulating film is comprised of a material including silicon, oxygen and carbon,
wherein the second insulating film is comprised of a material including silicon, carbon, oxygen and nitrogen,
wherein the third insulating film is comprised of a material including silicon and carbon,
wherein the material of the second insulating film is different form the material of the third insulating film,
wherein a barrier property to copper of the second insulating film is greater than a barrier property to copper of the third insulating film, and
wherein a thickness of the second insulating film is larger than a thickness of the third insulating film.

15 more elements

A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

(a) forming a first insulating film over a semiconductor substrate;
(b) forming a first wiring trench in the first insulating film;
(c) filling a first metal film in the first wiring trench;
(d) forming a second insulating film over the first metal film and over the first insulating film;
(e) forming a third insulating film over the second insulating film;
(f) forming a fourth insulating film formed over the third insulating film;
(g) forming a contact hole in the fourth, third and second insulating films;
(h) forming a second wiring trench in the fourth insulating film;
and
(i) filling a second metal film in the second wiring trench and the contact hole as one combined unit, such that the second metal wiring is connected to the first metal film,
wherein the first and second metal films include copper as a primary component,
wherein the fourth insulating film has a greater thickness than the combined thicknesses of the second and third insulating films, has a dielectric constant lower than a dielectric constant of a silicon oxide film and is comprised of a material including silicon, oxygen and carbon,
wherein the first insulating film is comprised of a material including silicon, oxygen and carbon,
wherein the second insulating film is comprised of a material including silicon, carbon and oxygen,
wherein the third insulating film is comprised of a material including silicon and carbon,
wherein the material of the second insulating film is different form the material of the third insulating film,
wherein a barrier property to copper of the second insulating film is greater than a barrier property to copper of the third insulating film, and
wherein a thickness of the second insulating film is larger than a thickness of the third insulating film.

15 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/862,268Filed 12 Apr 2013 · continuation
Priority: JP 2003-08334825 Mar 2003
Published: US 2013/0224947 A129 Aug 2013
Granted: 31 Dec 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification20 codes

H10W 20/087
For dual-damascene structures: involving multiple stacked pre-patterned masks
H10W 20/031
Manufacture or treatment: of conductive parts of the interconnections
H10W 20/033
Of conductive barrier, adhesion or liner layers: in openings in dielectrics
H10W 20/035
In openings in dielectrics: combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers

Family

Application10/807,222Parent of this continuation · filed 24 Mar 2004
Application11/449,814Parent of this division · filed 9 Jun 2006
US 7,323,781 B2Parent of this continuation · filed 29 Jan 2008
Application12/489,006Parent of this division · filed 22 Jun 2009
US 7,777,343 B2Parent of this division · filed 17 Aug 2010
Application13/243,882Parent of this continuation · filed 23 Sep 2011
US 8,053,893 B2Parent of this division · filed 8 Nov 2011
US 2013/0224947 A1Pre-grant publication · published 29 Aug 2013
US 8,431,480 B2Parent of this continuation
Application13/243,882Parent of this division
Application11/449,814Parent of this continuation
US 2004/0227242 A1Published application
US 2006/0226555 A1Published application
US 2009/0256261 A1Published application
US 2012/0015514 A1Published application
US 8,617,981 B2This patent

From the US filing history. Foreign family members aren’t listed.