Source/drain re-growth for manufacturing III-V based transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hsin Ko, Clement Hsingjen Wann
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Abstract
A method of forming an integrated circuit structure includes providing a substrate, and epitaxially growing a first semiconductor layer over the substrate. The first semiconductor layer includes a first III-V compound semiconductor material formed of group III and group V elements. The method further includes forming a gate structure on the first semiconductor layer, and forming a gate spacer on at least one sidewall of the gate structure. After the step of forming the gate structure, a second semiconductor layer including a second III-V compound semiconductor material is epitaxially grown on the first semiconductor layer.
Claims19
A method of forming an integrated circuit structure, the method comprising:
- providing a substrate;
- epitaxially growing a first semiconductor layer over the substrate, wherein the first semiconductor layer comprises a first III-V compound semiconductor material formed of group III and group V elements;
- forming a gate structure on the first semiconductor layer;
- forming a gate spacer on at least one sidewall of the gate structure;
- and
- after the step of forming the gate structure, epitaxially growing a second semiconductor layer comprising a second III-V compound semiconductor material on the first semiconductor layer.
A method of forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- epitaxially growing a bottom barrier over the semiconductor substrate;
- epitaxially growing a channel layer over the bottom barrier, the channel layer comprising a first III-V compound semiconductor material formed of group III and group V elements;
- epitaxially growing a top barrier over the channel layer, wherein the bottom barrier and the top barrier are semiconductor layers having bandgaps greater than a bandgap of the channel layer;
- forming a gate structure on the top barrier;
- forming a gate spacer on a sidewall of the gate structure;
- and
- after the step of forming the gate structure and the step of forming the gate spacer, epitaxially growing an epitaxy layer comprising a second III-V compound semiconductor material on and contacting the top barrier.
A method of forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- epitaxially growing a channel layer over the semiconductor substrate, wherein the channel layer comprises a first III-V compound semiconductor material formed of group III and group V elements;
- forming a gate structure on and contacting the channel layer;
- forming a gate spacer on a sidewall of the gate structure;
- and
- performing a selective epitaxial growth to grow an epitaxy layer comprising a second III-V compound semiconductor material on and contacting the channel layer.
Dependencies are inferred from the claim text.