Semiconductor device fabrication methods with enhanced control in recessing processes
AssigneeGlobalfoundries Inc.
InventorsRuilong Xie, Robert J. Miller
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Abstract
Semiconductor device fabrication methods having enhanced control in recessing processes are provided. In a method for fabricating a semiconductor device or plurality of them, a structure is formed. The method includes preparing a limited amount of the structure having a depth of less than ten atomic layers for removal. Further, the method includes performing a removal process to remove the limited amount of the structure. The method repeats preparation of successive limited amounts of the structure for removal, and performance of the removal process to form a recess at an upper portion of the structure.
Claims20
A semiconductor device fabrication method having enhanced control in recessing processes comprising:
- forming a structure;
- performing a surface treatment process that transforms an exposed surface of the structure to an intermediate removable layer having a thickness of less than ten atomic layers;
- and
- performing a removal process to remove the intermediate removable layer.
A semiconductor device fabrication method comprising:
- forming a replacement gate electrode over a substrate;
- preparing a limited amount of the replacement gate electrode for removal by performing a surface treatment process that transforms an exposed surface of the replacement gate electrode to an intermediate removable layer;
- performing a removal process to remove the intermediate removable layer;
- repeating the preparing and the performing to form a recess at a peripheral portion of the replacement gate electrode;
- depositing a dielectric layer in the recess;
- forming an insulating cap on top of the gate electrode and the dielectric layer and forming a contact.
A semiconductor device fabrication method comprising:
- forming a structure;
- preparing a limited amount of the structure for removal by performing a surface treatment process that transforms an exposed surface of the structure to an intermediate removable layer;
- and
- performing a removal process to remove the intermediate removable layer.
Dependencies are inferred from the claim text.