Method of manufacturing semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorMakoto Koto
Life of this patent
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Abstract
The present invention relates to a method of manufacturing a semiconductor device by which the length of nanowires perpendicularly formed can be fabricated with high reproducibility. The method of manufacturing a semiconductor device includes the steps of forming a first layer; forming a stop layer on the first layer, the stop layer having a higher Young's modulus than the first layer; forming a recess by partially removing the first layer and the stop layer; growing nanowires in the recess; forming a planarizing layer; removing the planarizing layer to the level of the stop layer to expose the nanowires from the surface of the planarizing layer; and forming an electrode so as to be in contact with the upper ends of the nanowires.
Claims7
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first layer on a substrate;
- forming a stop layer on the first layer, the stop layer having a higher Young's modulus than the first layer;
- forming a recess by partially removing the first layer and the stop layer such that a portion of the substrate is exposed;
- growing nanowires extending in a direction perpendicular to a surface of the substrate in the recess such that the length of the nanowires is larger than the sum of the thickness of the first layer and the thickness of the stop layer;
- forming a planarizing layer in the recess in which the nanowires have been grown, the planarizing layer having a thickness larger than the sum of the thickness of the first layer and the thickness of the stop layer and having a lower Young's modulus than the stop layer;
- removing the planarizing layer to the level of the stop layer to expose the nanowires from the surface of the planarizing layer;
- and
- forming an electrode so as to be in contact with the upper ends of the nanowires.
Dependencies are inferred from the claim text.