Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs)

A method of forming a semiconductor device comprising:

• providing a first strained layer of a first composition semiconductor material over a dielectric layer;
• implanting a first portion of the first strained layer of the first composition semiconductor material to form relaxed islands of the first composition semiconductor material separated by amorphous implanted regions of the first composition semiconductor material, wherein a second portion of the first strained layer maintains an intrinsic strain;
• forming a second composition semiconductor material over the relaxed island of the first composition semiconductor material;
• and
• intermixing the second composition semiconductor material with the relaxed islands of the first composition semiconductor material to provide a second strained layer having a different strain than the intrinsic strain of the first strained layer.