Vertically oriented nanostructure and fabricating method thereof
AssigneeTunghai University
InventorHsi-Lien Hsiao
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Abstract
A vertically oriented nanometer-wires structure is disclosed. The vertically oriented nanometer-wires structure includes a non-crystalline base and many straight nanometer-wires. The straight nanometer-wires are uniformly distributed on the non-crystalline base, and the angle between each of the straight nanometer-wire and the non-crystalline base is 80-90 degrees. The straight nanometer-wires structure can be widely applied in semiconductor, optoelectronic, biological and energy field. What is worth to be noticed is that the non-crystalline base can be glass, ceramics, synthetic, resin, rubber or even metal foil, and the straight nanometer-wires and the non-crystalline base are still orthogonal to each other.
Claims18
A vertically oriented taper-shaped semiconductor nanostructure fabricating method, comprising the following steps:
- put a non-crystalline on a plate of a vacuum chamber;
- disposing many metal catalyst particles on the non-crystalline base, wherein the diameters of the metal catalyst particles are at least 1 nm;
- heating the plate to 200-1000 Celsius degrees;
- providing a pyrolysis source in the vacuum chamber, and a thermal field is established via the plate and the pyrolysis source in the vacuum chamber;
- using the pyrolysis source to provide charge species, depositing the charge species on the non-crystalline base, and thus establishing an electric field on the surface of the non-crystalline base,
- wherein the gradient of the electric filed is disposed orthogonal to the surface of the non-crystalline base;
- and
- injecting a reaction gas into the vacuum chamber, wherein the reaction gas is cracked by the pyrolysis source and the flowing direction of the reaction gas is toward the non-crystalline base, so that the gradient of the reaction gas field is disposed parallel to the gradient of the thermal field;
- whereby a plurality of straight and taper-shaped semiconductor nanometer-wires are grown on the surface of the non-crystalline base, and the angle between each of the straight and taper shaped semiconductor nanometer-wires and the non-crystalline base is 80-90 degrees.
A vertically oriented semiconductor-based nanostructure fabricating method, comprising the following steps:
- putting a non-crystalline base on a plate of a vacuum chamber;
- disposing many metal catalyst particles on the non-crystalline base, wherein the diameters of the metal catalyst particles are at least 1 nm;
- providing a pyrolysis source on a top of the vacuum chamber;
- generating a thermal field in the vacuum chamber and controlling a gradient of the thermal field from the top to a bottom of the vacuum chamber, comprising:
- heating the pyrolysis source;
- and
- heating the plate of the vacuum chamber to 200-1000 Celsius degrees;
- generating an electric field in the vacuum chamber and controlling a gradient of the electric field so that the electrical field is orthogonal to the surface of the non-crystalline base, comprising:
- providing charge species using the pyrolysis source, and
- depositing charges on the non-crystalline base;
- and
- generating a concentration field of reaction gas and controlling a gradient of the concentration field so that the gradient of concentration field is disposed parallel to the gradient of the thermal field, comprising:
- injecting a reaction gas into the vacuum chamber, wherein the flowing direction of the reaction gas is toward the non-crystalline base;
- whereby a plurality of straight nanometer-wires are grown on the surface of the non-crystalline base, and the angle between each of the straight nanometer-wires and the non-crystalline base is 80-90 degrees.
Dependencies are inferred from the claim text.