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US 8,617,961 B1Granted
Post-gate isolation area formation for fin field effect transistor device
AssigneeInternational Business Machines Corporation
InventorsBalasubramanian S. Haran, Sanjay Mehta, Theodorus E. Standaert
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Abstract
A method for fin field effect transistor (finFET) device formation includes forming a plurality of fins on a substrate; forming a gate region over the plurality of fins; and forming isolation areas for the finFET device after formation of the gate region, wherein forming the isolation areas for the finFET device comprises performing one of oxidation or removal of a subset of the plurality of fins.
Claims20
A method for fin field effect transistor (finFET) device formation, the method comprising:
- forming a plurality of fins on a substrate;
- forming a gate region over the plurality of fins;
- and
- forming isolation areas for the finFET device after formation of the gate region, wherein forming the isolation areas for the finFET device comprises performing a removal of a subset of the plurality of fins.
1 more element
Dependencies are inferred from the claim text.