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US 8,617,959 B2Granted
Resistive memory and methods of processing resistive memory
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, John A. Smythe, III
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Abstract
Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam.
Claims23
A method of processing a memory cell, comprising:
- forming a seam in a cell material;
- wherein the seam is formed in the cell material by conformally forming the cell material;
- and
- forming a conductive pathway in the seam.
1 more element
A method of processing a memory cell, comprising:
- conformally forming a cell material such that a seam is formed in the cell material;
- wherein the seam is an opening in the cell material;
- and
- modifying the seam, wherein modifying the seam includes forming a filament in the seam.
1 more element
A method of processing a memory cell, comprising:
- conformally forming a cell material such that a seam is formed in the cell material;
- forming a conductive pathway in the seam;
- and
- removing a portion of the conductive pathway.
1 more element
A memory cell, comprising:
- a conformally formed cell material having a seam formed therein;
- and
- a conductive pathway in the seam, wherein the conductive pathway has a diameter of 5.0 nanometers or less.
A memory cell, comprising:
- a dielectric material having an opening;
- a cell material in the opening;
- a seam in the cell material;
- and
- an electrode adjacent the opening, wherein the electrode is not in contact with the seam.
2 more elements
Dependencies are inferred from the claim text.