Memory having a vertical access device
AssigneeMicron Technology, Inc.
InventorWerner Juengling
Life of this patent
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Abstract
Semiconductor memory devices having vertical access devices are disclosed. In some embodiments, a method of forming the device includes providing a recess in a semiconductor substrate that includes a pair of opposed side walls and a floor extending between the opposed side walls. A dielectric layer may be deposited on the side walls and the floor of the recess. A conductive film may be formed on the dielectric layer and processed to selectively remove the film from the floor of the recess and to remove at least a portion of the conductive film from the opposed sidewalls.
Claims19
A method of forming a memory device structure, comprising:
- providing recesses in a substrate, each recess having a pair of opposed side walls and a floor extending between the opposed side walls;
- depositing a dielectric on the side walls and the floor of each recess;
- forming a conductive film on the dielectric;
- processing the conductive film to remove the conductive film from the floor of each recess and to remove at least a portion of the conductive film from the opposed sidewalls of each recess;
- and
- providing trenches between adjacent ones of the recesses, extending in a direction substantially perpendicular to the pairs of opposed side walls of the recesses, and having a depth greater than a depth of the recesses.
A method of forming a memory device structure, comprising:
- providing recesses in a substrate, each recess having a pair of opposed side walls and a floor extending between the opposed side walls;
- depositing a dielectric on the side walls and the floor of each recess;
- forming a conductive film on the dielectric;
- processing the conductive film to remove the conductive film from the floor of each recess and to remove at least a portion of the conductive film from the opposed side walls;
- providing trenches between adjacent ones of the recesses, substantially in parallel with the recesses, and having a depth greater than a depth of the recesses;
- and
- providing other trenches between adjacent ones of the recesses, extending in a direction substantially perpendicular to the pairs of opposed side walls of the recesses, and having a depth greater than a depth of the recesses.
A method of forming a memory device structure, comprising:
- providing recesses in a substrate, each recess having a pair of opposed side walls and a floor extending between the opposed side walls;
- depositing a dielectric on the side walls and the floor of each recess;
- forming a conductive film on the dielectric;
- processing the conductive film to remove the conductive film from the floor of each recess and to remove at least a portion of the conductive film from the opposed side walls of each recess, wherein each recess extends into the substrate to a recess depth, and the conductive film extends along respective side walls of each recess to a conductive film depth that is less than the recess depth;
- and
- providing trenches between adjacent ones of the recesses, extending in a direction substantially perpendicular to the pairs of opposed side walls of the recesses, and having a depth greater than a depth of the recesses.
Dependencies are inferred from the claim text.