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US 8,617,947 B2Granted
Method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-kyu Yang, Phil-ouk Nam, Ki-hyun Hwang, Jae-young Ahn, Han-mei Choi, Bi-o Kim
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a channel region, forming a buffer layer on the channel region, and heat-treating the channel region by using a gas containing halogen atoms.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a channel region;
- forming a buffer layer on the channel region;
- and
- heat-treating the channel region by using a gas containing halogen atoms.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- alternately stacking interlayer sacrificial layers and interlayer insulating layers on a substrate;
- forming first openings through the interlayer sacrificial layers and the interlayer insulating layers, the first openings exposing the substrate;
- forming channel regions in the first openings;
- forming buffer layers on the channel regions;
- and
- heat-treating the channel regions by using a gas containing halogen atoms.
3 more elements
A method of manufacturing a transistor, the method comprising:
- forming a polycrystalline silicon layer on a substrate to form a channel region;
- forming a buffer layer that covers the channel region;
- and
- heat-treating the channel region by applying a gas containing halogen atoms to the buffer layer.
1 more element
Dependencies are inferred from the claim text.