Semiconductor chip device with polymeric filler trench

A method of manufacturing, comprising:

• applying an insulating layer to a first semiconductor chip, the insulating layer having an upper surface;
• forming a trench in the insulating layer, the trench having a width and a length, the width being smaller than the length, the trench being defined by opposing sidewalls of the insulating layer and adapted to receive a polymeric filler;
• and
• wherein the first semiconductor chip is adapted to have a second semiconductor chip stacked thereon to leave a gap between the second semiconductor chip and the insulating layer in which a portion of the polymeric filler is positioned and another portion of the polymeric filler is positioned on the upper surface of the insulating layer.

A method of manufacturing, comprising:

• providing a semiconductor chip including an insulating layer, the insulating layer including a trench, the trench having a width and a length, the width being smaller than the length, the trench defined by opposing sidewalls of the insulating layer;
• stacking a second semiconductor chip on the first semiconductor chip to leave a gap between the second semiconductor chip and the insulating layer, the second semiconductor chip having an outer wall proximate the trench;
• and
• placing a polymeric filler in the gap wherein a portion of the polymeric filler is drawn into the trench, the trench being operable to restrain movement of the polymeric filler away from the outer wall.