Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
It is an object to provide a semiconductor device having excellent electric characteristics or high reliability, or a manufacturing method thereof. A semiconductor device including a gate electrode, an oxide semiconductor layer overlapping with the gate electrode, a source electrode and a drain electrode in contact with the oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer is provided. The oxide semiconductor layer is formed by a facing target sputtering method. The carrier concentration of the oxide semiconductor is less than 1×1012/cm3.
Claims14
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a gate electrode over a substrate;
- forming a gate insulating layer over the gate electrode;
- and
- forming an oxide semiconductor layer over the gate insulating layer,
- wherein the oxide semiconductor layer is formed by a sputtering method in which a pair of targets provided to face each other is used, and
- wherein a concentration of hydrogen in the oxide semiconductor layer is reduced by a first heat treatment after the oxide semiconductor layer is formed, and oxygen is supplied to the oxide semiconductor layer by a second heat treatment after the first heat treatment.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer over a substrate;
- forming a gate insulating layer in contact with at least a channel formation region of the oxide semiconductor layer;
- and
- forming a gate electrode over the gate insulating layer,
- wherein the oxide semiconductor layer is formed by a sputtering method in which a pair of targets provided to face each other is used, and
- wherein a concentration of hydrogen in the oxide semiconductor layer is reduced by a first heat treatment after the oxide semiconductor layer is formed, and oxygen is supplied to the oxide semiconductor layer by a second heat treatment after the first heat treatment.
Dependencies are inferred from the claim text.