Annealing thin films

A method comprising:

• forming a Kesterite film on a substrate, said Kesterite film and said substrate being generally planar, having an interface, and having a substrate exterior side and a Kesterite exterior side;
• locating a cap adjacent said Kesterite exterior side;
• applying sufficient heat to said Kesterite film and said substrate for a sufficient time to anneal said Kesterite film, said annealing being carried out with said cap adjacent said Kesterite exterior side;
• growing an emitter layer on said Kesterite exterior side, subsequent to said annealing;
• depositing a transparent conduction oxide layer on said emitter layer;
• depositing a top metal contact on said transparent conduction oxide layer;
• and
• carrying out device isolation to obtain a plurality of solar cells.

A method comprising:

• providing a film of thin-film solar cell material comprising copper, zinc, tin and at least one of sulfur and selenium on a substrate, said film and said substrate being generally planar, having an interface, and having a substrate exterior side and a film exterior side;
• locating a cap adjacent said film exterior side;
• and
• applying sufficient heat to said film and said substrate for a sufficient time to anneal said film, said annealing being carried out with said cap adjacent said film exterior side;
• wherein, in said locating step and applying steps, said cap is employed without any precursor layer thereon.

A method comprising:

• forming a film of thin-film solar cell material on a substrate, said film and said substrate being generally planar, having an interface, and having a substrate exterior side and a film exterior side;
• locating a cap adjacent said film exterior side;
• applying sufficient heat to said film and said substrate for a sufficient time to anneal said film, said annealing being carried out with said cap adjacent said film exterior side;
• growing an emitter layer on said film exterior side, subsequent to said annealing;
• depositing a transparent conduction oxide layer on said emitter layer;
• depositing a top metal contact on said transparent conduction oxide layer;
• and
• carrying out device isolation to obtain a plurality of solar cells;
• wherein, in said locating step and applying steps, said cap is employed without any precursor layer thereon.

A method comprising:

• providing a film of thin-film solar cell material on a substrate, said film and said substrate being generally planar, having an interface, and having a substrate exterior side and a film exterior side;
• locating a cap adjacent said film exterior side;
• and
• applying sufficient heat to said film and said substrate for a sufficient time to anneal said film, said annealing being carried out with said cap adjacent said film exterior side;
• applying a force to said cap during said annealing, and
• wherein, in said locating step and applying steps, said cap is employed without any precursor layer thereon.