Method of forming patterns
AssigneeFUJIFILM Corporation
InventorHideaki Tsubaki
Life of this patent
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Abstract
A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.
Claims39
A method for producing a semiconductor device, comprising a method of forming patterns on a semiconductor substrate, wherein the method of forming patterns comprises:
- (a) coating the seminconductor substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing its polarity by the action of an acid and becomes more soluble in positive developer and less soluble in negative developer upon irradiation with an actinic ray or radiation,
- (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film,
- (c) exposing the resist film via an immersion medium, and
- (d) performing development with a negative developer which consists essentially of an ester solvent.
A method for producing a semiconductor device, comprising a method of forming patterns on a semiconductor substrate, wherein the method of forming patterns comprises:
- (a) coating the semiconductor substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing its polarity by the action of an acid and becomes more soluble in positive developer and less soluble in negative developer upon irradiation with an actinic ray or radiation,
- (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film,
- (c) exposing the resist film via an immersion medium, and
- (d) performing development with a negative developer,
- wherein the negative developer comprises as least one solvent selected from the group consisting of butyl acetate, amyl acetate, and ethyl-3-ethoxypropionate.
A method for producing a semiconductor device, comprising a method of forming patterns on a semiconductor substrate, wherein the method of forming patterns comprises:
- (a) coating the semiconductor substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing its polarity by the action of an acid and becomes more soluble in positive developer and less soluble in negative developer upon irradiation with an actinic ray or radiation,
- (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film,
- (c) exposing the resist film via an immersion medium, and
- (d) performing development with a negative developer consisting essentially of an organic solvent having a boiling point of from 80° C. to 174° C.
A method for producing a semiconductor device, comprising a method of forming patterns on a semiconductor substrate, wherein the method of forming patterns comprises:
- coating the semiconductor substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing its polarity by the action of an acid and becomes more soluble in a positive developer which is an alkali developer and less soluble in a negative developer containing an organic solvent upon irradiation with an actinic ray or radiation,
- forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film,
- exposing the resist film containing the protective film via an immersion medium, and
- performing development with the negative developer.
Dependencies are inferred from the claim text.