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US 8,617,784 B2Granted
Increasing photoresist processing throughput
AssigneeIntel Corporation
InventorsDavid Fryer, Vivek Singh, Nikolay Suetin, Alex A. Granovsky
Life of this patent
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Abstract
Two acids may be formed per exposed photon using free radical promotion so that two acid products are produced via two parallel pathways. This results in increased fabrication facility throughput. In some embodiments, this may be achieved while reducing side-lobe defect liability.
Claims10
A method comprising:
- forming more than one acid in a photoresist per absorbed photon;
- and
- heating the photoresist to a temperature less than about 25° C. below the glass transition temperature of the photoresist while exposing it to radiation.
A method comprising:
- heating a photoresist while exposing the photoresist to radiation in an exposure tool;
- forming more than one acid per absorbed photon;
- and
- heating to a temperature less than about 25° C. below the glass transition temperature of the photoresist.
1 more element
Dependencies are inferred from the claim text.