Method of correcting mask pattern, computer program product, and method of manufacturing semiconductor device

A method of correcting a mask pattern, comprising:

• performing optical proximity effect corrections on a pattern within a layout with two reference flare values, respectively;
• calculating first mask patterns for the reference flare values;
• calculating a mask pattern correction amount for the pattern, based on:
• a flare value at an arrangement position where the pattern is arranged, and
• the first mask patterns;
• and
• obtaining a second mask pattern corresponding to the flare value at the arrangement position, based on the mask pattern correction amount.

A computer program product having a computer-readable recording medium including a plurality of instructions, which, when executed by a computer, cause the computer to:

• calculate, as a reference mask correction amount, a mask pattern correction amount at a reference flare value through a simulation of wafer transfer, for each of a plurality of types of patterns included in a layout;
• calculate, as change amount information, a change amount of the mask pattern correction amount corresponding to a change amount of a flare value for each of the plurality of types of patterns;
• create correspondence information correlating the patterns, the reference mask correction amounts, and the change amount information;
• extract, from the correspondence information, the reference mask correction amount and the change amount information corresponding to a target pattern;
• calculate, as a difference correction amount, a difference between the mask pattern correction amount corresponding to a flare value at an arrangement position where the target pattern is arranged and the reference mask correction amount, based on:
• a flare difference that is a difference between the flare value at the arrangement position and the reference flare value,
• the extracted reference mask correction amount, and
• the extracted change amount information;
• and
• create a mask pattern corresponding to the target pattern, using the difference correction amount and the reference mask correction amount.

A method of manufacturing a semiconductor device comprising:

• calculating, as a reference mask correction amount, a mask pattern correction amount at a reference flare value through a simulation of wafer transfer, for each of a plurality of types of patterns included in a layout;
• calculating, as change amount information, a change amount of the mask pattern correction amount corresponding to a change amount of a flare value for each of the plurality of types of patterns;
• creating correspondence information correlating the patterns, the reference mask correction amounts, and the change amount information;
• extracting, from the correspondence information, the reference mask correction amount and the change amount information corresponding to a target pattern;
• calculating, as a difference correction amount, a difference between the mask pattern correction amount corresponding to a flare value at an arrangement position where the target pattern is arranged and the reference mask correction amount, based based on:
• a flare difference that is a difference between the flare value at the arrangement position and the reference flare value,
• the extracted reference mask correction amount, and
• the extracted change amount information;
• creating a mask pattern corresponding to the target pattern, using the difference correction amount and the reference mask correction amount;
• manufacturing a mask using the created mask pattern;
• and
• forming a pattern on a substrate using the manufactured mask.

A method of manufacturing a semiconductor device, comprising:

• creating a correction rule correlating a change amount of a mask pattern correction amount with a change amount of a flare value and pattern characteristics of a mask pattern, the pattern characteristics including at least one of a line width of the mask pattern or a distance from an adjacent pattern to the mask pattern;
• and
• creating a mask pattern by performing a flare correction for a target mask pattern based on the correction rule, pattern characteristics of the target mask pattern, and a flare value at a position where the target mask pattern is located;
• manufacturing a mask using the created mask pattern;
• and
• manufacturing a pattern on a substrate using the manufactured mask.