Bonding layer on fluoropolymers
AssigneeCommissariat a l'Energie Atomique
InventorsChristophe Serbutoviez, Mohamed Benwadih, Jean-Marie Verilhac
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Abstract
The invention relates to a device comprising a layer made from a fluoropolymer, of which at least part of the surface is covered with a composition comprising a polymer having at least one fluorinated function and at least one acid or base function and forming a bonding layer on said fluoropolymer, said bonding layer being fully or partly covered by another layer.
Claims15
A transistor comprising a first deposited layer defining a layer consisting of a hydrophobic fluoropolymer defining a fluoropolymer layer deposited directly on a substrate, said hydrophobic fluoropolymer being selected from the group consisting of a polytetrafluoroethylene, a poly perfluoro butenyl vinyl ether, a copolymer of ethylene and chlorotrifluoroethylene, a tetrafluoroethylene perfluoromethylvinylether copolymer, and a poly(tetrafluoro-para-xylylene), wherein at least a part of a surface of the fluoropolymer layer is covered with a second deposited layer defining a bonding layer deposited directly on said fluoropolymer layer, said bonding layer having a composition comprising a single polymer having both (1) at least one fluorinated function and (2) at least one acid or base function;
- and
- wherein said bonding layer is at least partly covered by and in direct contact with another layer defining an outermost layer that is deposited last, wherein said outermost layer is at least one of an electrode, a semiconductive material, a dielectric, a layer of ink or a layer of adhesive.
A transistor device:
- wherein said transistor device is in a top grid configuration and comprises source and drain electrodes provided directly on a substrate, a semiconductive material layer provided on said substrate covering said source and drain electrodes, a first fluoropolymer layer provided directly on said semiconductive material layer, said first fluoropolymer layer consisting of a hydrophobic fluoropolymer selected from the group consisting of a polytetrafluoroethylene, a poly perfluoro butenyl vinyl ether, a copolymer of ethylene and chlorotrifluoroethylene, a tetrafluoroethylene perfluoromethylvinylether copolymer, and a poly(tetrafluoro-para-xylylene), a first bonding layer deposited directly on and covering said first fluoropolymer layer, said first bonding layer having a composition comprising a single polymer having both (1) at least one fluorinated function and (2) at least one acid or base function, and an another layer comprising at least one grid electrode covering and directly deposited on said first bonding layer and defining at least a portion of an outermost layer;
- or
- wherein said transistor device is in a bottom grid configuration and comprises at least one grid electrode provided on a substrate, a second fluoropolymer layer provided directly on said substrate and covering said at least one grid electrode, said second fluoropolymer layer consisting of a hydrophobic fluoropolymer selected from the group consisting of a polytetrafluoroethylene, a poly perfluoro butenyl vinyl ether, a copolymer of ethylene and chlorotrifluoroethylene, a tetrafluoroethylene perfluoromethylvinylether copolymer, and a poly(tetrafluoro-para-xylylene), a second bonding layer provided directly on and covering the second fluoropolymer layer, said second bonding layer having a composition comprising a single polymer having both (1) at least one fluorinated function and (2) at least one acid or base function, source and drain electrodes provided directly on said second bonding layer, and a second another layer comprising a semiconductive material covering and directly deposited on said second bonding layer and said source and drain electrodes and defining at least a portion of an outermost layer.
A transistor device:
- wherein said transistor device is in a top grid configuration and comprises source and drain electrodes provided directly on a substrate, a semiconductive material layer provided on said substrate covering said source and drain electrodes, a first fluoropolymer layer provided directly on said semiconductor material, said first fluoropolymer layer consisting of a hydrophobic fluoropolymer selected from the group consisting of a polytetrafluoroethylene, a poly perfluoro butenyl vinyl ether, a copolymer of ethylene and chlorotrifluoroethylene, a tetrafluoroethylene perfluoromethylvinylether copolymer, and a poly(tetrafluoro-para-xylylene) provided on said semiconductive material layer, a first bonding layer deposited directly on and covering said first fluoropolymer layer, said first bonding layer having a composition comprising a single polymer having both (1) at least one fluorinated function and (2) at least one acid or base function, a first dielectric layer provided directly on and covering said first bonding layer, and an another layer comprising at least one grid electrode covering and directly deposited on said first dielectric layer and defining at least a portion of an outermost layer;
- or
- wherein said transistor device is in a bottom grid configuration and comprises at least one grid electrode provided directly on a substrate, a second dielectric layer provided directly on said substrate and covering said at least one grid electrode, a second bonding layer provided on and covering said second dielectric layer, said second bonding layer having a composition comprising a single polymer having both (1) at least one fluorinated function and (2) at least one acid or base function, a second fluoropolymer layer deposited on said second bonding layer, said second fluoropolymer layer consisting of a hydrophobic fluoropolymer selected from the group consisting of a polytetrafluoroethylene, a poly perfluoro butenyl vinyl ether, a copolymer of ethylene and chlorotrifluoroethylene, a tetrafluoroethylene perfluoromethylvinylether copolymer, and a poly(tetrafluoro-para-xylylene), source and drain electrodes provided directly on said second fluoropolymer layer, and a second another layer comprising a semiconductive material covering and directly deposited on said second fluoropolymer layer and said source and drain electrodes and defining at least a portion of an outermost layer.
Dependencies are inferred from the claim text.