Cleaning composition, method for producing semiconductor device, and cleaning method

A method for producing a semiconductor device, including:

• an etching step of carrying out plasma etching for a semiconductor substrate;
• and/or
• an ashing step of carrying out ashing for the semiconductor substrate;
• and
• a cleaning step of cleaning the plasma etching residues and/or the ashing residues formed on the semiconductor substrate in the etching step and/or the ashing step, by means of the cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, which includes:
• (Component a) water,
• (Component b) an amine compound,
• (Component c) hydroxylamine sulfate,
• (Component d) a quaternary ammonium compound,
• (Component e) an organic acid, and
• (Component f) a water-soluble organic solvent, and
• has a pH of 6 to 9,
• wherein the component b is at least one compound selected from the group consisting of 2-ethylhexylamine, n-butylamine, 3-methoxypropylamine, tert-butylamine, benzylamine, n-hexylamine, cyclohexylamine, n-octylamine, N-methyl-N-butylamine, N-(3-aminopropyl)morpholine, 2-aminoethanol, o-xylenediamine, m-xylenediamine, p-xylenediamine, and n-dodecylamine.

A cleaning method including:

• a preparation step of preparing a cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate;
• and
• a cleaning step of cleaning the plasma etching residues and/or ashing residues formed on a semiconductor substrate by means of the cleaning composition,
• wherein the cleaning composition includes:
• (Component a) water,
• (Component b) an amine compound,
• (Component c) hydroxylamine sulfate,
• (Component d) a quaternary ammonium compound,
• (Component e) an organic acid, and
• (Component f) a water-soluble organic solvent, and
• has a pH of 6 to 9,
• wherein the component b is at least one compound selected from the group consisting of 2-ethylhexylamine, n-butylamine, 3-methoxypropylamine, tert-butylamine, benzylamine, n-hexylamine, cyclohexylamine, n-octylamine, N-methyl-N-butylamine, N-(3-aminopropyl)morpholine, 2-aminoethanol, o-xylenediamine, m-xylenediamine, p-xylenediamine, and n-dodecylamine.