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US 8,617,312 B2Granted
Systems and methods for forming layers that contain niobium and/or tantalum
AssigneeMicron Technology, Inc.
InventorsBrian A. Vaartstra, Stefan Uhlenbrock
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Abstract
A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
Claims11
A method of forming a mixed metal oxide, comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a first vapor comprising a first precursor having the formula M1(NRR′)2, wherein R and R′ are each independently an organic group and M1 is selected from the group consisting of barium, strontium, calcium, and magnesium;
- providing a second vapor comprising a second precursor that includes tantalum or niobium;
- providing a third vapor comprising a third precursor comprising oxygen;
- and
- directing the first, second and third vapors to the semiconductor substrate or substrate assembly to form an oxide comprising M1 M2O using a vapor deposition process.
3 more elements
A method of mixed metal composition, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a first vapor comprising a first precursor having the formula M1(NRR′)2, wherein R and R′ are each independently an organic group and M1 is selected from the group consisting of barium, strontium, calcium, and magnesium;
- providing a second vapor comprising a second precursor having the formula M2X5;
- where M2 is tantalum or niobium, and where X is fluorine, chlorine or bromine;
- and
- directing the first and second vapors to the semiconductor substrate or substrate assembly to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process;
- the metal layer comprising a mixture of M1 and M2.
4 more elements
A method of forming a mixed metal oxide, comprising:
- providing a semiconductor wafer in a reaction chamber;
- flowing a first vapor into the chamber, the first vapor comprising a first precursor having the formula Sr[N(SiMe3)2]2;
- flowing a second vapor into the chamber, the second vapor comprising a second precursor having the formula TaF5;
- flowing a third vapor into the chamber, the third vapor comprising water;
- and
- the first, second and third vapors being in the chamber at substantially non-overlapping times relative to one another to form the mixed metal oxide SrTa2O6 over the semiconductor wafer.
3 more elements
Dependencies are inferred from the claim text.