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US 8,617,305 B2Granted
Metal complexes for metal-containing film deposition
AssigneeAir Products and Chemicals, Inc.
InventorsXinjian Lei, Daniel P. Spence
Life of this patent
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Abstract
Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries.
Claims15
A metal-containing complex having a structure I(A):
- wherein R1 is selected from the group consisting of linear or branched alkyl having from 1 to 10 carbon atoms;
- R2 is selected from the group consisting of hydrogen, alkyl having from 1 to 10 carbon atoms, and aryl having 6 to 10 carbon atoms;
- R3 is selected from the group consisting of linear or branched alkyl having 1 to 10 carbon atoms and aryl having 6 to 10 carbon atoms;
- R4 is a linear or branched alkyl bridge having 2 to 10 carbon atoms;
- R5 and R6 are individually selected from the group consisting of C1-C10 linear or branched alkyl;
- R1 and R2 are optionally connected to form a cyclic group;
- R4 and R5 are optionally connected to form a cyclic group;
- R′ is selected from the group consisting of C1-10 linear or branched alkyl or alkylsilyl having 3-10 carbon atoms;
- n=1 or 2;
- and
- M is selected from the group consisting of yttrium, lanthanum, gadolinium, erbium, and magnesium.
8 more elements
Dependencies are inferred from the claim text.