Polishing agent and method for polishing substrate using the polishing agent
AssigneeHitachi Chemical Company, Ltd.
InventorsYousuke Hoshi, Daisuke Ryuzaki, Naoyuki Koyama, Shigeru Nobe
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Abstract
Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
Claims20
A polishing agent comprising:
- water;
- tetravalent metal hydroxide particles;
- and an additive,
- wherein at least one component of the additive is selected from the group consisting of the following compounds (1) and (2):
- (1) an allylamine polymer derivative soluble in water, selected from the group consisting of an allylamine hydrochloride polymer, an allylamine amide sulfate polymer, an allylamine hydrochloride-diallylamine hydrochloride copolymer, an allylamine acetate-diallylamine acetate copolymer, an allylamine hydrochloride-dimethylallylamine hydrochloride copolymer, an allylamine-dimethylallylamine copolymer, a partial methoxycarbonylated allylamine polymer, and a partial methylcarbonylated allylamine acetate polymer;
- and
- (2) a polymer containing at least one of monomer component selected from the group consisting of the following formulas (I) to (IV):
- wherein in the formulas (I) to (IV), R1 to R5 each independently represent a hydrogen atom or a monovalent organic group;
- and X represents a divalent organic group.
Dependencies are inferred from the claim text.