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US 8,616,741 B2Granted
Vehicle headlamp
AssigneeIchikoh Industries, Ltd.
InventorYasuhiro Ookubo
Life of this patent
Estimating the term…
Abstract
A vehicle headlamp is provided with: a reflector having reflecting surfaces made of a parabola-based free curved face; and semiconductor-type light sources having a light emitting chip shaped like a planar rectangle. The reflecting surfaces 2U, 2D are made up of: a first reflecting surface forming a high luminous intensity zone; a second reflecting surface forming a middle luminous intensity zone; and a third reflecting surface forming a low luminous intensity zone. As a result, the vehicle headlamp allows downsizing, weight reduction, and cost reduction. In addition, precision of assembling optical elements can be improved.
Claims9
A vehicle headlamp, comprising:
- (i) a semiconductor-type light source for emitting light;
- (ii) a reflector made of a parabola-based curved face, having a plurality of reflecting surfaces which are divided along the vertical-axis direction, for reflecting light radiated in a vertical-axis direction from a light emitting face of the semiconductor-type light source, as reflection light, so as to illuminate the reflected light toward a forward direction of a vehicle, wherein:
- the plurality of reflecting surfaces of the reflector includes a predetermined reflecting surface provided in a range in which a reflection image of the semiconductor-type light source is obtained within a longitudinal angle of ±40 degrees from a center in a vertical-axis direction of the light emitting face of the semiconductor-type light source and in a range of high energy in energy distribution of the semiconductor-type light source,
- the predetermined reflecting surface of the reflector includes a first reflecting surface and a second reflecting surface adjacent to each other at a center of the reflector;
- the first reflecting surface is a reflecting surface on which a reflection image group of the semiconductor-type light source according to the first reflecting surface is formed near the oblique cutoff line and the horizontal cutoff line in comparison with the refection image group of the semiconductor-type light source according to the second reflecting surface, and density of the reflection image group of the semiconductor-type light source according to the first reflecting surface is higher than density of the reflection image group of the semiconductor-type light source according to the second reflecting surface;
- and
- the second reflecting surface has a light distribution range of the reflection image of the semiconductor-type light source including a light distribution range of the reflection image of the semiconductor-type light source according to the first reflecting surface so that the reflection image group of the semiconductor-type light source according to the second reflecting surface contains the reflection image group of the semiconductor-type light source according to the first reflecting surface.
4 more elements
A vehicle headlamp, comprising:
- (i) a semiconductor-type light source for emitting light;
- (ii) a reflector made of a parabola-based curved face, having a plurality of reflecting surfaces which are divided along the vertical-axis direction, for reflecting light radiated in a vertical-axis direction from a light emitting face of the semiconductor-type light source, as reflection light, so as to illuminate the reflected light toward a forward direction of a vehicle, wherein:
- the plurality of reflecting surfaces of the reflector includes:
- a first reflecting surface and a second reflecting surface which are adjacent to each other at a center of the reflector and are arranged in a range of high energy in energy distribution of the semiconductor-type light source;
- and
- a third reflecting surface which is arranged at a respective one of ends of the reflector so as to sandwich the first reflecting surface and the second reflecting surface therebetween, and is arranged in a range of low energy in energy distribution of the semiconductor-type light source;
- and wherein:
- the first reflecting surface is a reflecting surface on which a reflection image group of the semiconductor-type light source according to the first reflecting surface is formed near the oblique cutoff line and the horizontal cutoff line in comparison with the refection image group of the semiconductor-type light source according to the second reflecting surface, and density of the reflection image group of the semiconductor-type light source according to the first reflecting surface is higher than density of the reflection image group of the semiconductor-type light source according to the second reflecting surface;
- and
- the first reflecting surface and the second reflecting surface are provided in a range in which a reflection image of the semiconductor-type light source is obtained within a longitudinal angle of about ±40 degrees from a center in a vertical-axis direction of the light emitting face of the semiconductor-type light source.
7 more elements
Dependencies are inferred from the claim text.