US 8,615,857 B2Granted

Method of manufacturing piezoelectric vibrators

AssigneeSeiko Instruments Inc.

InventorMasashi Numata

Life of this patent

Estimating the term…

Loading patent…

Abstract

Providing a glass assembly cutting method capable of improving yield by cutting a glass assembly into a predetermined size, providing a package manufacturing method, a package and a piezoelectric vibrator manufactured by the manufacturing method, and an oscillator, an electronic device, and a radio-controlled timepiece. Providing a wafer assembly cutting method of cutting a wafer assembly 60 along a scribe line M′, the method including: a scribing step of irradiating a laser beam having an absorption wavelength of the wafer assembly 60 along the contour line to form the scribe line M′ on a lid board wafer 50; and a breaking step of applying a breaking stress along the scribe line M′ using a cutting blade to cut the wafer assembly along the scribe line M′, wherein the scribing step involves forming the scribe line M′ so that the ratio of a depth dimension D of the scribe line M′ to a width dimension W thereof is 0.8 or larger and 6.0 or smaller.

Claims10

Dependent claims

A method for producing piezoelectric vibrators each containing a piezoelectric vibrating strip inside, comprising:

(a) defining, along imaginary boundary lines, a plurality of first substrates on a first wafer and a plurality of second substrates on a second wafer;
(b) layering, between a bonding electrode and a table, the first and second wafers such that at least some of the first substrates substantially coincide respectively with at least some of the corresponding second substrates, with a bonding film being placed between respective pairs of at least some of the coinciding first and second substrates;
(c) hermetically bonding the first and second substrates of at least some of the respective pairs via the bonding film;
(d) cutting off each of at least some of the hermetically bonded pairs, which includes removing the bonding the bonding film lying on the boundary lines and scribing the first wafer with a laser along the boundary lines to form grooves with a ratio of whose width and depth ranges from 0.8 to 6.0, in which the scribing is performed after the removing the bonding film.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 12/870,161Filed 27 Aug 2010
Priority: JP 2009-19870828 Aug 2009
Published: US 2011/0050047 A13 Mar 2011
Granted: 31 Dec 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H03H 9/21
Constructional features of resonators consisting of piezoelectric or electrostrictive material: crystal tuning forks
H03H 9/1021
The enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device: the BAW device…
H10W 72/0198
Manufacture or treatment: batch processes
Y10T 29/42
Metal working: piezoelectric device making