Magneto-sensitive wire, magneto-impedance element and magneto-impedance sensor

Abstract

The magneto-sensitive wire of the invention has a vortex-spin structure and hence includes no magnetic domain walls, so that the magneto-sensitive wire of the invention has an excellent hysteresis characteristic exhibiting nearly zero hysteresis. Therefore, the linearity related to the output voltage characteristic for the applied magnetic field in the determination range of an MI sensor is significantly improved as compared to MI sensors using the conventional magneto-sensitive wires. Using the magneto-sensitive wire of the invention makes it possible to provide a magneto-impedance (MI) element exhibiting a higher precision than the conventional ones and further provide a sensor using such an MI element.

Dependencies are inferred from the claim text.