Capacitance type pressure sensor and method for manufacturing a capacitance type pressure sensor
AssigneeRohm Co., Ltd.
InventorMizuho Okada
Life of this patent
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Abstract
A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.
Claims10
A capacitance type pressure sensor, comprising:
- a semiconductor substrate having a reference pressure compartment formed therein;
- a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment;
- a filler arranged within the through-hole;
- and
- an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.
A method for manufacturing a capacitance type pressure sensor, the method comprising:
- forming a ring-shaped trench in a semiconductor substrate to surround a region on a surface of the semiconductor substrate;
- filling an isolation insulating layer into the ring-shaped trench;
- forming a hole in the region on the surface of the semiconductor substrate;
- introducing an etching agent into the hole and etching a substrate material existing below the hole to thereby form a reference pressure compartment below the hole and a diaphragm above the reference pressure compartment;
- and
- arranging fillers within the hole.
Dependencies are inferred from the claim text.