Method and system for defining a read sensor using an ion mill planarization
AssigneeWestern Digital (Fremont), LLC
InventorsAnup G. Roy, Ming Mao
Life of this patent
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Abstract
A method and system for fabricating a magnetic transducer is described. A magnetic junction is defined from the magnetoresistive stack. The magnetic junction has a top and a plurality of sides. The step of defining the magnetic junction redeposits a portion of the magnetoresistive stack and forms fencing adjacent to the top of the magnetic junction. At least one hard bias structure is provided after the magnetic junction is defined. A first portion of the at least one hard bias structure is substantially adjacent to the magnetoresistive junction in a track-width direction. The magnetic junction is ion beam planarized, thereby substantially removing the fencing.
Claims15
A method for fabricating a magnetic transducer having a magnetoresistive stack, the method comprising:
- defining a magnetic junction from the magnetoresistive stack, the magnetic junction having a top and a plurality of sides, the step of defining the magnetic junction redepositing a portion of the magnetoresistive stack and forming fencing adjacent to the top of the magnetic junction;
- providing at least one hard bias structure after the magnetic junction is defined, a first portion of the at least one hard bias structure being substantially adjacent to the magnetoresistive junction in a track-width direction;
- and
- ion beam planarizing the magnetic junction, thereby substantially removing the fencing.
A method for fabricating a magnetic transducer having a magnetoresistive stack, the method comprising:
- providing a mask on the magnetoresistive stack corresponding to a magnetic junction;
- performing at least one of an ion milling and a reactive ion etch on an exposed portion of the magnetoresistive stack to define the magnetic junction, the magnetic junction having a top and a plurality of sides, the step of ion milling the magnetic junction redepositing a portion of the magnetoresistive stack and forming fencing adjacent to the top of the magnetic junction;
- providing at least one hard bias structure after the magnetoresistive structure is defined, a first portion of the at least one hard bias structure being substantially adjacent to the magnetoresistive junction in a track-width direction, the at least one hard bias structure including at least one seed layer, at least one hard bias material on the at least one seed layer, and a capping layer on the at least one hard bias material, the capping layer having a thickness of not more than twenty nanometers;
- removing a remaining portion of the mask after the at least one hard bias structure is provided;
- depositing a sacrificial layer covering the magnetic junction, the fencing, and the at least one hard bias structure, the sacrificial layer having an ion milling removal rate depending on a milling angle, the sacrificial layer being solid and having a thickness of at least twenty Angstroms and not more than sixty Angstroms;
- ion milling the transducer at an angle of at least seventy degrees from a normal to a surface of the magnetic transducer;
- and
- optionally repeating the steps of depositing the sacrificial layer and ion milling until the fencing is removed without chemically mechanically planarizing the magnetic transducer.
Dependencies are inferred from the claim text.