Integrated circuit and fabricating method thereof

An integrated circuit, comprising:

• a silicon substrate;
• an interconnecting structure disposed above the silicon substrate and comprising a plurality of dielectric layers, wherein each dielectric layer filled with the at least a conductive material;
• and
• a micro electromechanical system (MEMS) diaphragm disposed between any two adjacent dielectric layers, wherein the dielectric layer under the MEMS diaphragm has a plurality of first openings exposing corresponding conductive materials, the MEMS diaphragm comprising:
• a bottom insulating layer covering sidewalls of the first opening and having at least a first trench;
• a first electrode layer disposed on the bottom insulating layer and filling into the first trench to electrically connect with the corresponding conductive materials;
• and
• a top insulating layer disposed on the first electrode layer.

A method for fabricating an integrated circuit, comprising:

• providing a silicon substrate with a logical circuit region and a micro electromechanical system (MEMS) region;
• forming a metal oxide semiconductor device on the logical circuit region of the conductive substrate;
• forming an interconnecting structure electrically connecting to the metal oxide semiconductor device and comprising a plurality of dielectric layers above the silicon substrate, each dielectric layer filled with the at least a conductive material;
• forming a MEMS diaphragm between any two adjacent dielectric layers of the interconnecting structure on the MEMS region, wherein the steps of forming the MEMS diaphragm comprising:
• forming a plurality of first openings in any dielectric layer of the interconnecting structure to expose the corresponding conductive materials;
• forming a bottom insulating layer on the dielectric layer to fill into the first openings;
• removing a portion of the bottom insulating layer located on the bottom of the first openings to form at least a first trench exposing corresponding at least a portion of one of the conductive materials;
• forming a first electrode layer on the bottom insulating layer to fill into the first trench and electrically connect to the corresponding conductive materials;
• and
• forming a top insulating layer to cover the first electrode layer.