Film forming method and film forming apparatus
AssigneeFuji Electric Co., Ltd.
InventorsHideaki Matsuyama, Takehito Wada
Life of this patent
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Abstract
A film forming process is performed on a substrate in a deposition chamber. A first electrode is provided in the deposition chamber and is grounded. A second electrode is provided in the deposition chamber to face the first electrode. A radio frequency power supply supplies radio frequency power to the second electrode. A DC power supply supplies a DC bias voltage to the second electrode. A control unit adjusts a bias voltage to be less than the potential of the second electrode when the radio frequency power is supplied, but the bias voltage is not supplied. In this way, it is possible to improve film quality while preventing a reduction in the deposition rate of a film during deposition.
Claims47
A method of forming a film, comprising the steps of:
- (a) providing a deposition chamber containing a first electrode and a second electrode facing the first electrode, a material gas therein, and a substrate on the first electrode;
- (b) grounding the first electrode;
- (c) supplying radio frequency power and a bias voltage to the second electrode, thereby to form a film from the material gas on the substrate by plasma CVD;
- (d) determining a first average potential of the second electrode with respect to the first electrode, with the radio frequency power supplied thereto without the bias voltage;
- and
- (e) during step (c), adjusting a second average potential of the second electrode with respect to the first electrode, to be less than the first average potential.
A method of forming a film, comprising:
- (a) providing a deposition chamber containing a first electrode, a second electrode facing the first electrode, a material gas therein and a substrate on the first electrode;
- (b) supplying radio frequency power to the second electrode so as to generate a plasma;
- (c) during step (b), supplying a bias voltage to the first electrode or the second electrode;
- and
- (d) during steps (b) and (c), controlling the bias voltage on the basis of a first plasma potential, the first plasma potential being a potential of the plasma with respect to the first electrode, determined based upon (Vdc+V0p)/2, to form the film on the substrate from the material gas by plasma CVD,
- Vdc being an average potential of the second electrode with respect to the first electrode and V0p being a voltage amplitude of the second electrode with respect to the first electrode.
Dependencies are inferred from the claim text.