US 8,577,494 B2Granted

Semiconductor manufacturing apparatus and control system and control method therefor

AssigneeSpansion LLC

InventorsKazuhiro Miwa, Kazuhiro Watanabe, Akito Mifune

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Abstract

Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.

Claims22

Dependent claims

A method of controlling a semiconductor manufacturing apparatus comprising:

obtaining a plurality of processing parameters for processing a wafer, wherein the processing parameters comprise processing conditions of the semiconductor manufacturing apparatus, and wherein the processing parameters further comprise at least one of a DC bias level applied to an electrode of the semiconductor manufacturing apparatus, an He leak amount at a time of chucking the wafer, and a capacitor value in a matching circuit for RF power;
obtaining a target parameter that is measured from the wafer processed with the plurality of processing parameters;
performing a multiple classification analysis with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter that is one or more of the plurality of processing parameters;
obtaining the selected parameter of a processing while the processing is being performed by the semiconductor manufacturing apparatus;
calculating a predicted value of the target parameter of the wafer being processed by use of the model formula and the selected parameter, while the processing is being performed;
calculating a value to be modified of a modification parameter, the modification parameter being one or more of the plurality of processing parameters of the processing being performed by the semiconductor manufacturing apparatus on the basis of the predicted value, while the processing is being performed;
and
performing the processing continuously by use of the value to be modified of the modification parameter.

5 more elements

A controlling system of a semiconductor manufacturing apparatus comprising:

a processing portion for processing a wafer;
a first parameter obtaining portion operable to obtain a plurality of processing parameters that are processing conditions of the processing portion in processing the wafer, wherein the processing parameters comprise at least one of a DC bias level applied to an electrode of the semiconductor manufacturing apparatus, an He leak amount at a time of chucking the wafer, and a capacitor value in a matching circuit for RF power;
a target parameter obtaining portion operable to obtain a target parameter that is measured from the wafer processed with the plurality of processing parameters;
a model formula calculating portion operable to calculate a model formula expressing the target parameter in a selected parameter that is one or more of the plurality of processing parameters by performing a multiple classification analysis with the plurality of processing parameters and the target parameter;
a second parameter obtaining portion operable to obtain the selected parameter by the processing portion, while a processing is being performed by the processing portion;
a predicted value calculating portion operable to calculate a predicted value of the target parameter of the wafer being processed with the model formula and the selected parameter, while the processing is being performed;
and
a modification parameter calculating portion operable to calculate a value to be modified of a modification parameter based on the predicted value, the modification parameter being one or more of the plurality of processing parameters of the processing being performed by the processing portion, while the processing is being performed,
wherein the processing portion performs the processing continuously by use of the value to be modified of the modification parameter.

6 more elements

A semiconductor manufacturing apparatus comprising:

a processing portion for processing a wafer;
a selected parameter obtaining portion operable to obtain a selected parameter, which is one or more of a plurality of processing parameters that are processing conditions of the processing portion, while a processing is being performed by the processing portion, wherein the processing parameters comprise at least one of a DC bias level applied to an electrode of the semiconductor manufacturing apparatus, an He leak amount at a time of chucking the wafer, and a capacitor value in a matching circuit for RF power;
a predicted value calculating portion operable to calculate a predicted value of a target parameter of the wafer being processed with a model formula and the selected parameter, the model formula expressing in the target parameter measured from the wafer processed by the processing portion, while the processing is being performed;
and
a modification parameter calculating portion operable to calculate a value to be modified of a modification parameter on the basis of the predicted value, the modification parameter being one or more of the plurality of processing parameters of the processing being performed by the processing portion, while the processing is being performed,
wherein the processing portion performs the processing continuously by use of the value to be modified of the modification parameter.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/020,692Filed 3 Feb 2011 · continuation
Priority: 8 Dec 2005
Published: US 2011/0130861 A12 Jun 2011
Granted: 5 Nov 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification2 codes

G05B 13/048
Involving the use of models or simulators: using a predictor
G05B
Control or regulating systems in general

Family

PCT/JP2005/022572Parent of this continuation-in-part · filed 8 Dec 2005
Application11/636,064Parent of this continuation · filed 6 Dec 2006
US 2011/0130861 A1Pre-grant publication · published 2 Jun 2011
US 7,908,025 B2Parent of this continuation
Application11/636,064Parent of this continuation-in-part
US 2007/0142957 A1Published application
US 8,577,494 B2This patent

From the US filing history. Foreign family members aren’t listed.