Method and apparatus of pattern inspection and semiconductor inspection system using the same
AssigneeHitachi High-Technologies Corporation
InventorsYasutaka Toyoda, Akiyuki Sugiyama, Ryoichi Matsuoka, Takumichi Sutani, Hidemitsu Naya
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Abstract
A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
Claims10
A pattern measuring apparatus comprising:
- a processor configured to measure a pattern dimension of an object of a semiconductor device based on image data obtained by a scanning electron microscope,
- wherein the processor is further configured to perform the machine-implemented steps of:
- selecting design data of the measured object from the design data of the semiconductor device;
- performing a pattern recognition using the selected design data, such that the measured object is recognized from the image data which is obtained by the scanning electron microscope including a plurality of overlapped patterns;
- and
- measuring the recognized measured object.
A pattern measuring apparatus comprising:
- a processor configured to measure a pattern dimension of an object of a semiconductor device based on image data which is obtained by a scanning electron microscope,
- wherein the processor is further configured to perform the machine-implemented steps of:
- selecting design data of a specific layer which includes the measured object from the design data of the semiconductor device;
- performing a pattern recognition using the selected design data, such that the measured object is recognized from the image data which is obtained by the scanning electron microscope including a plurality of overlapped patterns;
- and
- measuring the recognized measured object.
Dependencies are inferred from the claim text.