Non-volatile memory device having phase-change material and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-shik Shin, Ji-won Jung
Life of this patent
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Abstract
A non-volatile memory device includes a plurality of memory blocks. Each of memory blocks includes a main area including a plurality of first memory cells having a phase-change material and a spare area including at least one second memory cell for storing initial information about the plurality of first memory cells. In the non-volatile memory device, a circuit of the at least one second memory cell is cut off according to the initial information, and the initial information is defective block information that is information about a defect of the plurality of memory blocks.
Claims11
A non-volatile memory device, comprising:
- a plurality of memory blocks, each comprising:
- a main area including a plurality of first memory cells having a phase-change material;
- and
- a spare area including at least one second memory cell for storing initial information about the plurality of first memory cells,
- wherein a circuit of the at least one second memory cell is cut off according to the initial information, and the initial information is defective block information that is information about a defect of the plurality of memory blocks, and
- wherein the at least one second memory cell comprises:
- a phase-change element connected to a bit line;
- a switching element opening and closing a connection between the phase-change element and ground according to a signal applied via a word line;
- and
- a fuse layer that is opened by an electromagnetic wave, and
- wherein the fuse layer is arranged between the bit line and the phase-change element, between the phase-change element and the switching element, or between the switching element and the ground.
Dependencies are inferred from the claim text.