Semiconductor integrated circuit

A data processing device on a semiconductor substrate, the data processing device comprising:

• a first bus;
• a second bus;
• a processing unit coupled to the first bus;
• a volatile memory coupled to the first bus;
• an input/output port coupled to the second bus;
• an ECC circuit coupled to the first bus;
• an electrically rewritable nonvolatile memory having a read port coupled to the ECC circuit and a write port coupled to the second bus;
• and
• wherein the electrically rewritable nonvolatile memory has a first electrically rewritable nonvolatile memory area and a second electrically rewritable nonvolatile memory area,
• wherein the first electrically rewritable nonvolatile memory area has a rewrite control program to be executed by the processing unit, and
• wherein the second electrically rewritable nonvolatile memory area stores data to be used by the processing unit,
• a bus controller coupled between the first bus and the second bus,
• wherein the processing unit executes instructions to apply a rewrite operation of memory information after the processing unit executes the rewrite control program transferred from the first electrically rewritable memory area to the volatile memory.

A data processing device on a semiconductor substrate, the data processing device comprising:

• a first bus;
• a second bus;
• a processing unit coupled to the first bus;
• a volatile memory coupled to the first bus;
• an input/output port coupled to the second bus;
• an ECC circuit coupled to the first bus;
• an electrically rewritable nonvolatile memory having a read port coupled to the ECC circuit and a write port coupled to the second bus;
• and
• wherein the electrically rewritable nonvolatile memory has a first electrically rewritable nonvolatile memory area and a second electrically rewritable nonvolatile memory area,
• wherein the first electrically rewritable nonvolatile memory area has a rewrite control program to be executed by the processing unit, and
• wherein the second electrically rewritable nonvolatile memory area stores data to be used by the processing unit,
• a bus controller coupled between the first bus and the second bus,
• wherein a rewrite command given through the input/output port from an external device causes execution of instructions to apply a rewrite operation of memory information after the processing unit executes the rewrite control program transferred from the first electrically rewritable memory area to the volatile memory.

A data processing device on a semiconductor substrate, the data processing device comprising:

• a first bus;
• a second bus;
• a processing unit coupled to the first bus;
• a volatile memory coupled to the first bus;
• an ECC circuit coupled to the first bus;
• a bus controller coupled between the first bus and the second bus;
• an electrically rewritable nonvolatile memory having a read port coupled to the ECC circuit and a write port coupled to the second bus;
• wherein the first electrically rewritable nonvolatile memory area stores a program to be executed by the processing unit,
• wherein the second electrically rewritable nonvolatile memory area stores data to be used by the processing unit, and
• wherein the first electrically rewritable memory area and the second electrically rewritable memory area each include a plurality of electrically rewritable nonvolatile memory cells, each of the electrically rewritable nonvolatile memory cells including:
• a first gate;
• a second gate;
• and
• a charge storage area including an insulating film, the charge storage area being between the second gate and a channel of the second gate, the channel being in the semiconductor substrate,
• wherein the data processing device includes:
• a first circuit coupled to the first gates of the plurality of nonvolatile memory cells;
• and
• a second circuit coupled to the second gates of the plurality of nonvolatile memory cells,
• wherein a gate withstand voltage of the first circuit is lower than that of the second circuit.