US 8,576,635 B2Granted

Nonvolatile memory device and method of operating the same

AssigneeSK hynix Inc.

InventorsNam Kyeong Kim, Kyoung Chul Yang, Young Jin Woo, Tae Hyun Kim

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Abstract

A nonvolatile memory device includes memory cell blocks each configured to comprise memory cells erased by an erase voltage, supplied to a word line, and a bulk voltage supplied to a bulk, a bias voltage generator configured to generate a first erase voltage, having a first pulse width and a first amplitude, in order to perform the erase operation of the memory cells and a second erase voltage, having a second pulse width narrower than the first pulse width and a second amplitude lower than the first amplitude, in order to perform an additional erase operation if an unerased memory cell is detected after the erase operation is performed, and a bulk voltage generator configured to generate the bulk voltage.

Claims5

Dependent claims

A nonvolatile memory device, comprising:

memory cell blocks each configured to include memory cells to be erased by an erase voltage supplied to a word line and a bulk voltage supplied to a bulk;
a bias voltage generator configured to supply the erase voltage to the word line in order to perform an erase operation of the memory cells;
and
a bulk voltage generator configured to supply the bulk voltage to the bulk in order to perform the erase operation of the memory cells,
wherein if the unerased memory cell is detected after the erase operation, the bias voltage generator and the bulk voltage generator increase a difference between the erase voltage and the bulk voltage and decrease a time taken for the erase voltage to be supplied to the word lines or a time taken for the bulk voltage to be supplied to the bulk when an additional erase operation is performed.

2 more elements

Dependencies are inferred from the claim text.